Unveiling the role of bulk ionized charge in single-event leakage degradation of SiC Schottky diodes

Microelectronics Journal 2026

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Authors: Zikang Ge, X. Xu, Jinhao Hu, Xingze Yang, Leshan Qiu, Chenrui Zhang, Yunbiao Zhao, Jianming Xue

DOI: 10.1016/j.mejo.2026.107055

Cited by: 0

References: 43

Fields of Study & Subjects

Radiation Effects in Electronics Silicon Carbide Semiconductor Technologies Radiation Therapy and Dosimetry

References 43