Stress modulation of 2DEG concentration in thin-barrier AlGaN/GaN HEMT on Si substrate via LPCVD SiN: Experiment and simulation
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Advanced Sensor and Energy Harvesting Materials
Acoustic Wave Resonator Technologies
Publication details
- Journal / source
- Microelectronics Journal
- Publisher
- Elsevier BV
- Volume
- 170
- Pages
- 107087–107087
- Publication date
- 30 January 2026
- Language
- EN