Stress modulation of 2DEG concentration in thin-barrier AlGaN/GaN HEMT on Si substrate via LPCVD SiN: Experiment and simulation

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Authors: Quanxu Su, Jiejie Zhu, Mingdong Li, Bowen Zhang, Lingjie Qin, Qing Zhu, Xiaohua Ma
Cited by: 1
References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advanced Sensor and Energy Harvesting Materials Acoustic Wave Resonator Technologies

Publication details

Journal / source
Microelectronics Journal
Publisher
Elsevier BV
Volume
170
Pages
107087–107087
Publication date
30 January 2026
Language
EN