Single-event burnout hardening in p-GaN HEMTs through comb-patterned N-AlGaN channel engineering

Microelectronics Journal 2026

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Authors: Sheng Gao, Xuan Li, Liang Jing, Tianyu Chi, Xingyu Luo, Yuying Chen, Qi Wang, Manjing Wang

DOI: 10.1016/j.mejo.2026.107094

Cited by: 0

References: 18

Fields of Study & Subjects

Radiation Effects in Electronics GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

References 18