Enhancing breakdown voltage of AlGaN/GaN HEMTs by lateral buffer trap modulation

Microelectronics Journal 2026

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Authors: Yuchen Cui, Fazhan Zhao, Mifang Cong, Jian Lu
DOI: 10.1016/j.mejo.2026.107128
Cited by: 1
References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Acoustic Wave Resonator Technologies

Publication details

Journal / source
Microelectronics Journal
Publisher
Elsevier BV
Volume
172
Pages
107128–107128
Publication date
27 February 2026
Language
EN