Simulation and design of asymmetric vertical cladding layer-based tunneling field effect transistors with improved DC and Analog/RF performance
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor Quantum Structures and Devices
Quantum and electron transport phenomena
Publication details
- Journal / source
- Microelectronics Journal
- Publisher
- Elsevier BV
- Volume
- 172
- Pages
- 107145–107145
- Publication date
- 2 March 2026
- Language
- EN