Investigation on the degradation mechanisms of electrical parameters in 650 V p-GaN HEMT under repetitive short-circuit stress

Microelectronics Journal 2026 Open access

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Authors: Shaofeng Zhao, Teng Liu, Chenghao Li, 琳娜赵, Wei Huang, Xiaofeng Gu

DOI: 10.1016/j.mejo.2026.107206

Cited by: 0

References: 17

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces

References 17