Impact of DC current density on filling mechanism and microstructural evolution of metallization in TGV

Microelectronics Journal 2026

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Authors: Yangxu Qiao, H H. Chen, Ke Qin, Zihan Wang, Miao Wang, Wenlei Li, Yong Li, Dongbin Wang, Libin Gao, Jihua Zhang
DOI: 10.1016/j.mejo.2026.107259
Cited by: 1
References: 26

Fields of Study & Subjects

3D IC and TSV technologies Copper Interconnects and Reliability Silicon and Solar Cell Technologies

Publication details

Journal / source
Microelectronics Journal
Publisher
Elsevier BV
Volume
174
Pages
107259–107259
Publication date
9 May 2026
Language
EN