Reliability-enhanced, area-efficient and low-power SOT-MRAM bit-cell based on one-step complementary magnetization-switching and self-reference sensing regime

Microelectronics Journal 2026 Open access

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Authors: Hao Zhang, Dejian Li, Qirui Ren, Mengdi Zhang, Yuxiao Zhao, Sihai Qiu, Xin Kinson Jin, Yuzhe Chen, Z. G. Wang

DOI: 10.1016/j.mejo.2026.107386

Cited by: 0

References: 27

Fields of Study & Subjects

Advanced Memory and Neural Computing Advancements in Semiconductor Devices and Circuit Design Thin-Film Transistor Technologies

References 27