A wide temperature benchmark of the Re-G-HCJNFe FET for noise reduction in low-power analog integration
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Advancements in Semiconductor Devices and Circuit Design
Ferroelectric and Piezoelectric Materials
Publication details
- Journal / source
- Micro and Nanostructures
- Publisher
- Elsevier BV
- Volume
- 211
- Pages
- 208565–208565
- Publication date
- 7 January 2026
- Language
- EN