Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation
Fields of Study & Subjects
Semiconductor Quantum Structures and Devices
Quantum and electron transport phenomena
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Micro and Nanostructures
- Volume
- 212
- Pages
- 208567–208567
- Publication date
- 7 January 2026
- Language
- EN