GaN MOSHEMTs and MISHEMTs: A comprehensive review of device physics, materials innovation, and technological pathways in power and RF electronics

Micro and Nanostructures 2026

View at publisher
Authors: A. Danielraj, Reshma P. Vengaloor, A. Lakshmi Narayana, C. Sivamani
DOI: 10.1016/j.micrna.2026.208571
Cited by: 2
References: 192

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Micro and Nanostructures
Publisher
Elsevier BV
Volume
212
Pages
208571–208571
Publication date
12 January 2026
Language
EN