A numerical investigation on the performance of D/E-mode GaN HEMTs with nitride stress films

Micro and Nanostructures 2026

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Authors: Xing Wang, Yifei Wang, Yifei Wang, Yifei Wang, Guanyu Wang, Chunyu Zhou, Bo Ye, Song Shi

DOI: 10.1016/j.micrna.2026.208572

Cited by: 0

References: 35

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

References 35