Advantages of AlGaN-based 275-nm deep-ultraviolet LEDs with a tapered N-shaped aluminum-composition graded electron blocking layer

Micro and Nanostructures 2026

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Authors: Biao Shen, Taiping Lu, Yifan Zhang, Xiantian Shi, Zhigang Jia, Xiansheng Tang, Zhen Deng, Zhongqiang Wang, Yadan Zhu, Lichun Zhang

DOI: 10.1016/j.micrna.2026.208602

Cited by: 2

References: 46

Fields of Study & Subjects

GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates Ga2O3 and related materials

References 46