Tunable electronic properties and Schottky barrier in NbS2/SiS2 heterostructures via strain and electric field
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Semiconductor materials and interfaces
Publication details
- Journal / source
- Micro and Nanostructures
- Volume
- 213
- Pages
- 208603–208603
- Publication date
- 7 February 2026
- Language
- EN