Tunable electronic properties and Schottky barrier in NbS2/SiS2 heterostructures via strain and electric field

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Authors: You Xie, Jiahao Wang, Zhengyong Chen, Yan Chen, Zixuan Zhou, Wentaiyang Zhang, Tao Zhang
Cited by: 0
References: 54

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Semiconductor materials and interfaces

Publication details

Journal / source
Micro and Nanostructures
Volume
213
Pages
208603–208603
Publication date
7 February 2026
Language
EN