Design and modeling of gate–drain overlapped vertical TFET for enhanced ambipolar current suppression
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
2D Materials and Applications
Semiconductor materials and devices
Publication details
- Journal / source
- Micro and Nanostructures
- Volume
- 213
- Pages
- 208608–208608
- Publication date
- 12 February 2026
- Language
- EN