Investigating the impact of temperature variations on the device parameters of Gaussian Doped FinFETs

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Authors: B. Jasmine Priyadharshini, N. B. Balamurugan, M. Hemalatha, M. Suguna
Cited by: 0
References: 22

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Low-power high-performance VLSI design

Publication details

Journal / source
Micro and Nanostructures
Volume
214
Pages
208640–208640
Publication date
4 March 2026
Language
EN