Investigating the impact of temperature variations on the device parameters of Gaussian Doped FinFETs
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Low-power high-performance VLSI design
Publication details
- Journal / source
- Micro and Nanostructures
- Volume
- 214
- Pages
- 208640–208640
- Publication date
- 4 March 2026
- Language
- EN