Reducing dynamic-RON and ΔVTH in GaN E-mode HEMTs by integrating p+-GaN/p-InGaN/p-GaN composite gate with gate termination extension: Simulation evidence

Micro and Nanostructures 2026

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Authors: Liyan Huang, Youyang Wang, Yu Sun, Xiaobo Zhu, Wenhua Gu

DOI: 10.1016/j.micrna.2026.208641

Cited by: 0

References: 34

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

References 34