GaN/HfSn2N4 heterojunction with superior polarization sensitivity and strong optical absorption
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Boron and Carbon Nanomaterials Research
2D Materials and Applications
Publication details
- Journal / source
- Micro and Nanostructures
- Publisher
- Elsevier BV
- Volume
- 215
- Pages
- 208688–208688
- Publication date
- 10 April 2026
- Language
- EN