Sub-2nm negative capacitance FET SRAM architecture: Achieving 49.85× leakage power reduction and 66× performance enhancement

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Authors: Surbhi Bharti, Ashwni Kumar
Cited by: 2
References: 61

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Low-power high-performance VLSI design Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Micro and Nanostructures
Publisher
Elsevier BV
Volume
215
Pages
208689–208689
Publication date
6 April 2026
Language
EN