Sub-2nm negative capacitance FET SRAM architecture: Achieving 49.85× leakage power reduction and 66× performance enhancement
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Low-power high-performance VLSI design
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Micro and Nanostructures
- Publisher
- Elsevier BV
- Volume
- 215
- Pages
- 208689–208689
- Publication date
- 6 April 2026
- Language
- EN