Electro-thermal and switching performance of a heteroepitaxial π-Gate β-Ga₂O₃ MOSFET on a 4H-SiC substrate
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- Micro and Nanostructures
- Publisher
- Elsevier BV
- Volume
- 216
- Pages
- 208710–208710
- Publication date
- 1 May 2026
- Language
- EN