Electro-thermal and switching performance of a heteroepitaxial π-Gate β-Ga₂O₃ MOSFET on a 4H-SiC substrate

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Authors: Md Zafar Alam, Imran Ahmed khan, S. Intekhab Amin, Aadil Anam
Cited by: 1
References: 40

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Micro and Nanostructures
Publisher
Elsevier BV
Volume
216
Pages
208710–208710
Publication date
1 May 2026
Language
EN