A review of GaN HEMTs on β-Ga2O3 substrates for RF and power electronics applications

Micro and Nanostructures 2026

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Authors: E. Swarnalatha, B. Mounika, S. Sreejith
DOI: 10.1016/j.micrna.2026.208736
Cited by: 1
References: 98

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates

Publication details

Journal / source
Micro and Nanostructures
Publisher
Elsevier BV
Volume
216
Pages
208736–208736
Publication date
10 May 2026
Language
EN