Influence of quantum wells design and polarization fields on the performance of dual QW InGaN/GaN laser structures

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Authors: Redouane Sersar, Redouane En‐nadir, Ilyass Ez-zejjari, Walid Belaid, Hassan Abboudi, Ahmed Sali, Haddou El Ghazi
Cited by: 1
References: 32

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Spectroscopy and Laser Applications

Publication details

Journal / source
Micro and Nanostructures
Publisher
Elsevier BV
Volume
218
Pages
208832–208832
Publication date
9 July 2026
Language
EN