Trap charges reliability in a heterojunction double gate ferroelectric p-n-i-n tunnel FET (HJ-DG-Fe p-n-i-n TFET): A simulation study

Microelectronics Reliability 2026

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Authors: Shib Sankar Das, Subir Kumar Sarkar

DOI: 10.1016/j.microrel.2025.115987

Cited by: 1

References: 27

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advancements in Semiconductor Devices and Circuit Design Nanowire Synthesis and Applications

References 27