In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction

Microelectronics Reliability 2026 Open access

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Authors: Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau
DOI: 10.1016/j.microrel.2026.116005
Cited by: 0
References: 11

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Fatigue and fracture mechanics

Publication details

Journal / source
Microelectronics Reliability
Volume
177
Pages
116005–116005
Publication date
16 January 2026
Language
EN