Correlation of trap generation in SiC MOSFETs under γ-ray irradiation and bias temperature stress
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Radiation Effects in Electronics
Semiconductor materials and devices
Publication details
- Journal / source
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Volume
- 177
- Pages
- 116007–116007
- Publication date
- 15 January 2026
- Language
- EN