Performance evaluation of InN-based Junctionless FETs under single and double gate architectures

Microelectronics Reliability 2026

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Authors: S.K. Verma, Pushpa Raikwal, Neeraj K. Jaiswal
DOI: 10.1016/j.microrel.2026.116014
Cited by: 2
References: 38

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Microelectronics Reliability
Publisher
Elsevier BV
Volume
177
Pages
116014–116014
Publication date
17 January 2026
Language
EN