Degradation mechanisms of gate oxide reliability in SiC Power MOSFETs under different energy proton irradiation

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Authors: Binrui Xue, Ying Wei, Mingzhu Xun, Dan Zhang, Xiaowen Liang, Jiaxing Wang, Jingyi Xu, Jie Feng, Xuefeng Yu, Lin Wen, Qi Guo, Yudong Li
Cited by: 0
References: 25

Fields of Study & Subjects

Radiation Effects in Electronics Silicon Carbide Semiconductor Technologies Particle Detector Development and Performance

Publication details

Journal / source
Microelectronics Reliability
Volume
178
Pages
116035–116035
Publication date
29 January 2026
Language
EN