Degradation mechanisms of gate oxide reliability in SiC Power MOSFETs under different energy proton irradiation
Fields of Study & Subjects
Radiation Effects in Electronics
Silicon Carbide Semiconductor Technologies
Particle Detector Development and Performance
Publication details
- Journal / source
- Microelectronics Reliability
- Volume
- 178
- Pages
- 116035–116035
- Publication date
- 29 January 2026
- Language
- EN