A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration

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Authors: Yong Zhang, Ran Tao, Dawei Gao
Cited by: 0
References: 11

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices

Publication details

Journal / source
Microelectronics Reliability
Volume
178
Pages
116036–116036
Publication date
28 January 2026
Language
EN