A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- Microelectronics Reliability
- Volume
- 178
- Pages
- 116036–116036
- Publication date
- 28 January 2026
- Language
- EN