Investigation of TiO₂ seed layer engineering for improved remanent polarization uniformity, TDDB reliability, and dipole switching in La-doped ferroelectric HZO MFM devices

Microelectronics Reliability 2026

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Authors: Hsien-Yang Liu, N. Ronchi, Jasper Bizindavyi, Mihaela Ioana Popovici, Chia-Mu Yu, Peng-Meng Chen, Chiung-Yuan Lin, Jan Van Houdt, Tianli Wu
DOI: 10.1016/j.microrel.2026.116046
Cited by: 0
References: 15

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials Semiconductor materials and devices

Publication details

Journal / source
Microelectronics Reliability
Volume
179
Pages
116046–116046
Publication date
17 February 2026
Language
EN