Inductance and capacitance parasitic prediction thanks to data analysis applied to Si and SiC MOSFET wide frequency band characterization
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Electromagnetic Compatibility and Noise Suppression
Integrated Circuits and Semiconductor Failure Analysis
Publication details
- Journal / source
- Microelectronics Reliability
- Volume
- 179
- Pages
- 116047–116047
- Publication date
- 11 February 2026
- Language
- EN