Inductance and capacitance parasitic prediction thanks to data analysis applied to Si and SiC MOSFET wide frequency band characterization

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Authors: P-E. Vidal, Guillaume Viné, Stéphane Baffreau, Anusha Gopishetti, T.L. Le
Cited by: 0
References: 5

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Electromagnetic Compatibility and Noise Suppression Integrated Circuits and Semiconductor Failure Analysis

Publication details

Journal / source
Microelectronics Reliability
Volume
179
Pages
116047–116047
Publication date
11 February 2026
Language
EN