Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications

Microelectronics Reliability 2026 Open access

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Authors: Duc-Hoan Tran, Bernardo Cougo, Rodrigo Drummond, Israel Divan, Gilles Segond

DOI: 10.1016/j.microrel.2026.116078

Cited by: 0

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials Advanced Power Amplifier Design