Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits

Microelectronics Reliability 2026 Open access

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Authors: Adrien Lambert, P. Bevilacqua, D. Tournier, L. Guillot, L.V. Phung, H. Morel, D. Planson

DOI: 10.1016/j.microrel.2026.116103

Cited by: 1

References: 17

Fields of Study & Subjects

GaN-based semiconductor devices and materials Radio Frequency Integrated Circuit Design Silicon Carbide Semiconductor Technologies

References 17