Dynamic Gate Stress: Impact of duty cycle and gate resistance on automotive grade planar-gate 1200 V SiC MOSFET

Microelectronics Reliability 2026

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Authors: Michele Fiore, Alessandro Sitta, Giuseppe Mauromicale, Gaetano Sequenzia, Francesco Iannuzzo, Michele Calabretta

DOI: 10.1016/j.microrel.2026.116104

Cited by: 0

References: 12

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Radiation Effects in Electronics Semiconductor materials and devices

References 12