10 kW inverter with vertical-GaN trench MOSFETs and its operation instability related to MOS interface

Microelectronics Reliability 2026

View at publisher

Authors: Junya Nishii, K. Hasegawa, Nariaki Tanaka, Takaki Niwa, Hiroshi Tadano, Tetsuo Narita, Koji Shiozaki

DOI: 10.1016/j.microrel.2026.116124

Cited by: 1

References: 5

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced Power Amplifier Design

References 5