Reliability verification of a dual-car elevator ASIC in SCL 180-nm CMOS: NBTI aging, multi-corner timing, and ISO 26262 ASIL-B collision avoidance
Fields of Study & Subjects
Radiation Effects in Electronics
Semiconductor materials and devices
Electrostatic Discharge in Electronics
Publication details
- Journal / source
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Volume
- 183
- Pages
- 116213–116213
- Publication date
- 19 June 2026
- Language
- EN