Reliability verification of a dual-car elevator ASIC in SCL 180-nm CMOS: NBTI aging, multi-corner timing, and ISO 26262 ASIL-B collision avoidance

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Authors: A. Sriram, T. N. Prabakar
Cited by: 1
References: 13

Fields of Study & Subjects

Radiation Effects in Electronics Semiconductor materials and devices Electrostatic Discharge in Electronics

Publication details

Journal / source
Microelectronics Reliability
Publisher
Elsevier BV
Volume
183
Pages
116213–116213
Publication date
19 June 2026
Language
EN