Interface dipole engineering via TiO2-doped HfO2 interlayers for flat-band voltage modulation in scaled high-k gate stacks

Materials Science and Engineering B 2026

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Authors: Han-Fang Shiue, Hao-Chen Wu, Kian-Guan Lim, Chun-Ho Chuang, Chi-Lin Mo, Miin‐Jang Chen

DOI: 10.1016/j.mseb.2026.119182

Cited by: 0

References: 40

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Copper Interconnects and Reliability

References 40