Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit

Materials Science and Engineering B 2026

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Authors: Ellapu Bhanu Prakash, Anil Prasad Dadi, Vijay Maitra, Tathagata Ghose, Ashok K Ray, Sushanta Bordoloi

DOI: 10.1016/j.mseb.2026.119223

Cited by: 5

References: 52

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

References 52