Geometric-contrast-driven threading dislocations identification in 4H-SiC via synergistic micro-etching and X-ray topography

Materials Science and Engineering B 2026

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Authors: Kerui Chen, Jiangfeng Wang, Shan Yang, Guangzhao Li, Li Sun, Xuejian Xie, Xiufang Chen, Rongkun Wang, Xianglong Yang, Xiaobo Hu, Xiangang Xu
DOI: 10.1016/j.mseb.2026.119282
Cited by: 1
References: 32

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Thin-Film Transistor Technologies Silicon and Solar Cell Technologies

Publication details

Journal / source
Materials Science and Engineering B
Publisher
Elsevier BV
Volume
327
Pages
119282–119282
Publication date
10 February 2026
Language
EN