Tuning the structural, electronic, and transport properties of ferroelectric‑zinc blende phase Ga2O3 monolayer by Si dopant and biaxial strain
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
2D Materials and Applications
Publication details
- Journal / source
- Materials Science and Engineering B
- Publisher
- Elsevier BV
- Volume
- 329
- Pages
- 119405–119405
- Publication date
- 28 March 2026
- Language
- EN