2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates

Materials Science in Semiconductor Processing 2026

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Authors: Justyna Wierzbicka, Wojciech Hendzelek, Maciej Kamiński, Jarosław Tarenko, Joanna Jankowska-Śliwińska, Aleksandra Wójcicka, Oskar Sadowski, Aneta Gołębiowska, Krzysztof Urbanowski, Verónica Gao Zhan, Anna Szerling, Andrzej Taube
DOI: 10.1016/j.mssp.2025.110385
Cited by: 3
References: 32

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
206
Pages
110385–110385
Publication date
5 January 2026
Language
EN