Switchable external field response properties induced by ferroelectric polarization in α-In2Se3/HfS2 heterostructures

Materials Science in Semiconductor Processing 2026

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Authors: RenWei Guo, Yang Doris Liu, Xianbin Zhang
DOI: 10.1016/j.mssp.2025.110396
Cited by: 1
References: 47

Fields of Study & Subjects

2D Materials and Applications Ferroelectric and Negative Capacitance Devices Multiferroics and related materials

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
205
Pages
110396–110396
Publication date
3 January 2026
Language
EN