The effect of hydrogen annealing on the electrical properties of β-Ga2O3/4H-SiC MOSFETs grown by liquid-injection MOCVD

Materials Science in Semiconductor Processing 2026

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Authors: Fedor Hrubišák, M. Ťapajna, Fridrich Egyenes, Ondrej Pohorelec, Edmund Dobročka, A. Rosová, K. Hušeková, Á. Vincze, Pavol Noga, Tibor Izsák, Boris Hudec, Tomáš Ščepka
+1 more Filip Gucmann
DOI: 10.1016/j.mssp.2025.110402
Cited by: 2
References: 45

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials High voltage insulation and dielectric phenomena

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
206
Pages
110402–110402
Publication date
7 January 2026
Language
EN