DV/dt-Induced degradation and failure mechanisms in 1200 V SiC MOSFETs under dynamic reverse bias stress

Materials Science in Semiconductor Processing 2026

View at publisher

Authors: Liudan Kong, Jiuyang Tang, Jiaying Cao, Yifei Chang, Qingchun Jon Zhang, Pan Liu

DOI: 10.1016/j.mssp.2026.110406

Cited by: 1

References: 11

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

References 11