Performance improvements in All-2D Te field effect transistor with layer-engineered homojunction using sputtering deposition
Fields of Study & Subjects
Topological Materials and Phenomena
2D Materials and Applications
Phase-change materials and chalcogenides
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 206
- Pages
- 110443–110443
- Publication date
- 19 January 2026
- Language
- EN