Room-temperature direct bonding of yttria-stabilized zirconia to silicon wafer via surface activation for advanced heterointegration
Fields of Study & Subjects
3D IC and TSV technologies
Semiconductor materials and devices
Electronic and Structural Properties of Oxides
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Volume
- 206
- Pages
- 110450–110450
- Publication date
- 19 January 2026
- Language
- EN