Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices

Materials Science in Semiconductor Processing 2026

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Authors: Emmanuel Igumbor, Patience Ajeh, Edwin R Mapasha, Ezekiel Omotoso, A.T. Raji

DOI: 10.1016/j.mssp.2026.110465

Cited by: 0

References: 67

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies 2D Materials and Applications Graphene research and applications

References 67