Monolithic inverters using GaN-based fin-gated multichannel complementary metal-oxide-semiconductor high-electron mobility transistors with source field plate

Materials Science in Semiconductor Processing 2026

View at publisher

Authors: Pin-Hong He, Ching-Ting Lee, Ching-Ting Lee, Jone F. Chen, Hsin-Ying Lee

DOI: 10.1016/j.mssp.2026.110476

Cited by: 0

References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

References 25