Comparative study on the overcurrent failure mechanisms of ohmic-gate and Schottky-gate GaN HEMTs

Materials Science in Semiconductor Processing 2026

View at publisher

Authors: Chaofan Pan, Xi Jiang, Hao Long Niu, Song Yuan, Xiangdong Li, Shuzhen You, Xiaowu Gong, Jun Wang

DOI: 10.1016/j.mssp.2026.110482

Cited by: 1

References: 11

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

References 11