Demonstration of CMOS inverter on poly-crystalline Ge on glass

Materials Science in Semiconductor Processing 2026 Open access

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Authors: Atsuki Morimoto, Linyu Huang, Kota Igura, Takamitsu Ishiyama, Dong Wang, Kaoru Toko, Keisuke Yamamoto
DOI: 10.1016/j.mssp.2026.110493
Cited by: 1
References: 32

Abstract

Fabrication of germanium (Ge) thin-film transistors (TFTs) at low temperature on an insulator is essential for the realization of monolithic three-dimensional large-scale integration and flexible electronic devices. We investigated a complementary metal-oxide semiconductor (CMOS) inverter comprising an accumulation-mode p-channel (p-) TFT and inversion-mode n-channel (n-) TFT on poly-crystalline Ge formed on a glass substrate by solid-phase crystallization. We successfully fabricated accumulation-mode p-TFT and inversion-mode n-TFT on the same chip at low temperature (

Fields of Study & Subjects

Thin-Film Transistor Technologies Photonic and Optical Devices Silicon Nanostructures and Photoluminescence

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
207
Pages
110493–110493
Publication date
9 February 2026
Language
EN