GaN-based high output voltage binary and ternary digital components achieved by neutral beam etching
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Volume
- 207
- Pages
- 110494–110494
- Publication date
- 4 February 2026
- Language
- EN